Selective Area Epitaxy


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Oxide stripes for SAE process

    Selective area epitaxy is the use of patterned silicon dioxide or nitride materials as masks to selectively grow three dimensional structures on the surface of the semiconductor, allowing for ridges, optical waveguides, and lateral index steps to be realized.




Selected Publications

T. S. Yeoh, R. B. Swint, A. Gaur, V.C. Elarde, J. J. Coleman, “Selective Growth of InAs Quantum Dots by Metalorganic Chemical Vapor Deposition,” IEEE J. Sel.Topics Quant. Electron., 8, 4 (2002)

V. C. Elarde, T. S. Yeoh, R. Rangarajan, and J. J. Coleman, “Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth,” J. Cryst. Growth, 272, (2004)