Metalorganic Chemical Vapor Deposition
MOCVD Reactor |
Metalorganic Chemical Vapor
Deposition (MOCVD) utilizes high purity metal alkyls and gaseous
hydrides as sources in a sophisticated computer controlled piping matrix for the deposition of lattice-matched and
strained-layer III-V compound semiconductor materials.
Selected Publications
J. J. Coleman, “Metalorganic Chemical Vapor Deposition for Optoelectronic Devices,” Proc. of IEEE, 85, 11 (1997)